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| Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 12 145 MAX. 1000 1000 500 5 10 32 1.5 160 UNIT V V V A A W V ns Ths 25 C IC = 3 A; IB = 0.6 A IC = 3 A; VCE = 5 V Ic=2.5A,IB1=0.5A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 500 1000 5 10 2 4 32 150 150 UNIT V V V A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W August 1998 1 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES ICBO ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCBO = VCESMmax (1000V) VCEO = VCEOMmax (500V) MIN. 500 10 14 10 - TYP. 0.25 0.97 22 25 13.5 12 MAX. 1.0 2.0 0.1 0.1 0.1 1.5 1.3 35 35 17 - UNIT mA mA mA mA mA V V V Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage VEB = 9 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 3 A; IB = 0.6 A Base-emitter saturation voltage IC = 3 A; IB = 0.6 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V DC current gain IC = 2.5 A; VCE = 5 V IC = 3 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT s s s s ns s ns 0.5 3.3 0.33 0.7 4 0.45 ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 1.4 145 1.6 160 1.7 160 1.9 200 1 Measured with half sine-wave voltage (curve tracer). August 1998 2 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX + 50v 100-200R IC 90 % ICon 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IBon 10 % tr 30ns -IBoff tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 200 LC IBon 100 LB T.U.T. -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IBon 10 % tf t T -IBoff t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. August 1998 3 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX 120 110 100 90 80 70 60 50 40 30 20 10 0 % Normalised Derating with heatsink compound 1.4 1.2 1.0 0.8 VBEsat/V P tot 0.6 0.4 0.2 0.0 0 20 40 60 80 Ths / C 100 120 140 0.1 1.0 IC/A 10.0 Fig.7. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths) h FE 100 5V Fig.10. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. VCEsat/V 0.5 0.4 10 0.3 Tj = 25 C 0.2 1V 0.1 1 0.01 0.1 IC / A 1 10 0.0 0 1 IC/A 10 Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4. Zth / (K/W) BU1706AX 2.0 VCEsat/V 10 1.6 IC=1A 1.2 2A 3A 4A 0.5 1 0.2 0.1 0.05 0.02 P D tp tp 0.8 0.1 D= T t 0.4 0.01 D=0 T 10u 100u 1m 10m 100m t/s 1 0.0 0.01 0.10 IB/A 1.00 10.00 0.001 1u 10 100 Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25C. Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T August 1998 4 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX IC/V 11 100 IC / A 10 9 8 7 ICM max 6 = 0.01 tp = 10 us 10 IC max II (1) 100 us 5 4 3 2 1 1 0 200 400 600 800 1,000 0 1,200 VCE CLAMP/V Fig.13. Reverse bias safe operating area. Tj Tj max I 1 ms 10 ms 0.1 VCC (2) 500 ms DC III 0.01 1 LC 10 100 VCE / V 1000 Fig.15. Forward bias safe operating area. Ths 25 C IBon VCL LB T.U.T. -VBB (1) (2) I II III NB: Fig.14. Test circuit for reverse bias safe operating area. Vcl 1000V; Vcc = 150V; VBB = -5V; LB = 1H; Lc = 200H Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE 100 and tp 0.6 s. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. August 1998 5 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.16. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1998 6 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Rev 1.000 |
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